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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6
BTB1184J3
Features
* Low VCE(sat) * Excellent current gain characteristics * Complementary to BTD1760J3 * RoHS compliant package
BVCEO IC RCESAT
-50V -3A 130m
Symbol
BTB1184J3
Outline
TO-252
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation (TA=25) Power Dissipation (TC=25) Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw=10ms *2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger.
BTB1184J3 CYStek Product Specification
Symbol VCBO VCEO VEBO IC ICP Pd(TA=25) Pd(TC=25) Tj Tstg
Limits -60 -50 -6 -3 -7 1 15 150 -55~+150
Unit V V V *1 *2 A W C C
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. -60 -50 -6 120 180 80 Typ. -0.26 -0.96 80 35 Max. -1 -1 -0.5 -1.2 560 Unit V V V A A V V MHz pF
Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 2/6
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 IC=-2A, IB=-0.1A IC=-2A, IB=-0.1A VCE=-2V, IC=-20mA VCE=-3V, IC=-500mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE2
Rank Range R 180~390 S 270~560
Ordering Information
Device BTB1184J3 Package TO-252 (RoHS compliant) Shipping 2500 pcs / Tape & Reel Marking B1184
Recommended soldering footprint
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=3V
Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 3/6
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
100
VCESAT@IC=50IB
100
VCE=2V
VCE=1V
10
VCESAT=30IB VCESAT=20IB
10 1 10 100 1000 Collector Current---IC(mA) 10000
1 1 10 100 1000 Collector Current---IC(mA) 10000
Saturation Voltage vs Collector Current
10000 10000
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
On Voltage---VBEON(mV)
Saturation Voltage---(mV)
1000
VBEON@VCE=2V
100 1 10 100 1000 Collector Current---IC(mA) 10000
100 1 10 100 1000 Collector Current---IC(mA) 10000
Power Derating Curve
1.2 Power Dissipation---PD(W)
Power Derating Curve
16 14 Power Dissipation---PD(W) 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Ambient Temperature---TA() 140 160
1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature---TA() 140 160
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 4/6
Carrier Tape Dimension
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C
Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 5/6
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature
Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max.
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
TO-252 Dimension
A C
Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 6/6
Marking:
Production month : Jan1, Feb2,..., Sep9, OctA, NovB, DecC
B L F G
D
Device Name HFE rank code
B1184
3 H E K 2 I 1 J
Production Year: 20066, 20077,..., etc
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283
Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80
DIM G H I J K L
Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630
Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: KFC; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1184J3
CYStek Product Specification

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